Pressure-induced band cross-over in Pb1−x Sn x Te

فرآوری آلیاژهای Pb(1-x) Sn (x) Te و بررسی مشخصات ریزساختاری آنها

Temperature dependent band gap in PbX (X=S, Se, Te)

Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators.

Topological insulators (TIs) are quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The most challenging problem faced by current investigations of these materials is to establish the existence of significant bulk conduction. Here we show how the band structure of topological insulators can be engineered by molecular beam epitaxy...

Experimental observation of Dirac-like surface states and topological phase transition in Pb(1-x)Sn(x)Te(111) films.

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb(1-x)Sn(x)Te(111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb(1-x)Sn(x)Te(111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb r...

Observation of a topological crystalline insulator phase and topological phase transition in Pb(1-x)Sn(x)Te.

A topological insulator protected by time-reversal symmetry is realized via spin-orbit interaction-driven band inversion. The topological phase in the Bi(1-x)Sb(x) system is due to an odd number of band inversions. A related spin-orbit system, the Pb(1-x)Sn(x)Te, has long been known to contain an even number of inversions based on band theory. Here we experimentally investigate the possibility ...